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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1700pF @ 25V
- Power - Max：48W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJB00EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports a continuous drain current of 30 A per leg at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.013 Ω at VGS = 10 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a leadless PowerPAK SO-8L package.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for low conduction losses
- 100% tested for gate charge and single-pulse avalanche energy
Applications
- Automotive power distribution systems
- High-side and low-side switching applications
- Motor control circuits requiring high thermal stability
Procurement Notes
Verify the component against the official Vishay datasheet (Document Number: 76110) to confirm technical compliance. Ensure that the ordering suffix matches the required packaging configuration. Cross-reference the manufacturer part number with authorized distributors to validate authenticity before integration into production designs.
Selection Notes
Select this component when a dual N-channel configuration with low RDS(on) is required for 60 V automotive environments. Evaluate the thermal impedance characteristics against the specific PCB copper area available. Confirm that the gate drive voltage meets the 10 V specification for optimal on-state performance.
Part Context
This part belongs to the Vishay Siliconix SQJ series, designed specifically for automotive applications. It integrates two independent N-channel MOSFETs into a compact surface-mount package. The series emphasizes robustness through comprehensive testing protocols including UIS validation.
Replacement Considerations
Consult the Vishay product selector or distributor cross-reference tools for verified equivalent parts. Do not substitute based solely on pin compatibility without verifying electrical parameters and thermal ratings.
