SQJB04ELP-T1_GE3

$1.27

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®

SKU:6a75b33143a4 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Rds On (Max) @ Id, Vgs：11mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1055pF @ 25V
Power - Max：27W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJB04ELP-T1_GE3

Overview

The SQJB04ELP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and operates up to a 175 °C junction temperature. The device offers low on-resistance of 0.0110 Ω at VGS = 10 V and 0.0146 Ω at VGS = 4.5 V, with a continuous drain current of 30 A per leg. Packaged in a leadless PowerPAK SO-8L, it is AEC-Q101 qualified and tested for 100% Rg and UIS reliability.

Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET structure for optimized performance
Dual configuration with independent channels in a compact package

Applications

Automotive power distribution systems
High-side and low-side switching applications
Load management circuits requiring 40 V operation

Procurement Notes

Verify the specific ordering suffix GE3 confirms compliance with material categorization definitions for environmental compliance as referenced in Vishay documentation. Ensure the component matches the PowerPAK SO-8L package outline dimensions provided in the datasheet. Confirm that the AEC-Q101 qualification status meets the specific requirements of the target automotive application before finalizing procurement.

Selection Notes

Select this component for designs requiring a dual N-channel MOSFET with a 40 V breakdown voltage and high thermal stability up to 175 °C. Consider the 0.0110 Ω on-resistance at 10 V gate drive for efficient conduction. Verify that the PCB layout supports the PowerPAK SO-8L footprint and that the thermal resistance characteristics align with the system's heat dissipation capabilities.

Part Context

This part belongs to the Vishay Siliconix SQJB series of automotive dual N-channel MOSFETs. It is designed specifically for robust performance in demanding automotive environments. The series utilizes TrenchFET technology to achieve low on-resistance and high switching efficiency within a compact, leadless package suitable for space-constrained board layouts.