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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：8mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1900pF @ 25V
- Power - Max：34W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJB40EP is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage and supports continuous drain currents of 30 A per leg at 25 °C. The device offers low on-resistance, specified as 8 mΩ at VGS = 10 V and 11 mΩ at VGS = 4.5 V. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55 °C to +175 °C. Packaged in a PowerPAK SO-8L Dual configuration, the component includes integrated body diodes with defined reverse recovery characteristics.
Feature Summary
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET power MOSFET architecture for optimized performance
- Dual independent N-channel configuration in a compact package
Applications
- Automotive power distribution systems
- High-side and low-side switching applications
- DC-DC converter circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance with halogen-free and lead-free material definitions. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm that the delivered components match the exact part number designation without unauthorized modifications to the marking or packaging specifications.
Selection Notes
Select this component when a dual N-channel configuration is required for space-constrained automotive designs. Evaluate the thermal resistance ratings against the expected PCB copper area and ambient conditions. Consider the gate charge parameters for driving circuit compatibility and the avalanche energy ratings if inductive load switching is anticipated in the target application environment.
Part Context
This device belongs to the Vishay Siliconix automotive MOSFET portfolio, designed specifically for high-reliability environments. The PowerPAK SO-8L Dual package provides a compact footprint suitable for dense board layouts. The product line emphasizes robustness through rigorous testing protocols, including 100% Rg and UIS verification, ensuring consistent performance across varying operational temperatures.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before implementation.
