SQJB46ELP-T1_GE3

Overview

The Vishay Siliconix SQJB46ELP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 40 V drain-source voltage rating and operates up to +175 °C junction temperature. Each channel provides a continuous drain current of 30 A at 25 °C case temperature, with a maximum on-state resistance of 8 mΩ at VGS = 10 V. The device is housed in a compact PowerPAK SO-8L package and is qualified under AEC-Q101 standards.

Feature Summary

• Dual N-channel configuration within a single leaded PowerPAK SO-8L package
• AEC-Q101 qualified for automotive reliability requirements
• TrenchFET Gen IV architecture optimized for low conduction losses
• Validated against 100% avalanche energy and on-resistance testing

Applications

• Automotive power distribution systems
• High-side and low-side load switch circuits
• DC motor control applications

Procurement Notes

Verify the specific ordering suffix to confirm packaging format, as standard designations may vary between cut tape and reel configurations. Confirm RoHS compliance status through official documentation prior to final procurement decisions. Ensure the component matches the exact part number required for the intended circuit design.

Selection Notes

Select this component when a dual N-channel topology is required in a small footprint. Evaluate thermal management needs based on the 4.3 °C/W junction-to-case rating. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance. Consider the exposed copper terminal requirements during PCB soldering process validation.

Part Context

This component belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It shares the PowerPAK SO-8L package form factor with other devices in the lineup but offers distinct electrical characteristics tailored for 40 V dual-channel applications.

Replacement Considerations

SQJB46ELP