SQJB48EP-T1_JE3

Overview

The SQJB48EP-T1_JE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 30 A per leg at 25 °C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 0.0052 Ω at VGS = 10 V and ID = 8 A. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a leadless PowerPAK SO-8L Dual package.

Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• TrenchFET power MOSFET architecture for optimized performance
• 100% tested for both RDS(on) and Unclamped Inductive Switching (UIS)
• Leadless PowerPAK SO-8L Dual package design

Applications

• Automotive power distribution systems
• High-side and low-side switching applications
• Motor control circuits requiring dual channel configuration

Procurement Notes

Verify the JE3 suffix indicates compliance with specific material categorization requirements as defined by Vishay. Confirm that the ordering code matches the exact datasheet revision required for your design. Ensure procurement channels provide traceability documentation consistent with automotive quality standards.

Selection Notes

Select this component when a dual N-channel configuration is required in a compact footprint. Evaluate thermal management needs based on the 3.1 °C/W junction-to-case thermal resistance. Verify that the PCB layout accommodates the exposed copper terminals characteristic of the leadless PowerPAK SO-8L package.

Part Context

This part belongs to the SQJB series of automotive dual N-channel MOSFETs. It shares the PowerPAK SO-8L Dual package form factor with other devices in the family but is distinguished by its specific 40 V voltage rating and associated electrical characteristics.

Replacement Considerations

SQJB44EP-T1_GE3 is a documented substitute offering similar dual N-channel functionality within the same package type.