SQJB60EP-T1_BE3

Overview

The Vishay Siliconix SQJB60EP-T1_BE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports a continuous drain current of 30 A per leg at 25 °C. The device exhibits a maximum on-state resistance of 0.012 Ω at VGS = 10 V and 0.016 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified and undergoes 100% Rg and UIS testing.

Feature Summary

• Automotive-grade reliability with AEC-Q101 qualification
• TrenchFET power MOSFET architecture for optimized performance
• Leadless PowerPAK SO-8L package design for efficient thermal dissipation

Applications

• Automotive power distribution systems
• High-side and low-side load switch applications
• DC motor control circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the requested part number matches the exact electrical specifications required for the target application. Ensure compliance with RoHS directives and material categorization standards before procurement.

Selection Notes

Select this component for applications requiring high current handling in a compact form factor. Evaluate the thermal resistance characteristics relative to the PCB layout constraints. Consider the gate charge parameters when designing drive circuits for switching frequency requirements.

Part Context

This part belongs to the Vishay Siliconix SQJB series of dual N-channel MOSFETs. It shares the PowerPAK SO-8L package footprint with other devices in the family but offers distinct electrical ratings tailored for automotive environments.

Replacement Considerations

SQJB60EP-T1_GE3