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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 11A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Rds On (Max) @ Id, Vgs：92mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：280pF @ 25V
- Power - Max：27W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJB68EP-T1_BE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 100 V drain-source voltage rating and operates up to a junction temperature of 175 °C. Each channel provides a continuous drain current of 11 A at 25 °C, with a maximum on-state resistance of 0.092 Ω at VGS = 10 V. The device is housed in a leadless PowerPAK SO-8L package and is qualified under the AEC-Q101 standard.
Feature Summary
- Dual N-channel configuration within a compact leadless PowerPAK SO-8L package
- Automotive qualification compliant with AEC-Q101 standards
- TrenchFET power MOSFET architecture for optimized performance
- Validated through 100% gate resistance and unclamped inductive switching tests
Applications
- Automotive high-side or low-side load switching applications
- Power distribution units (PDUs) in vehicle electrical systems
- General purpose power switching circuits requiring 100 V isolation
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the component matches the intended thermal management strategy, as the leadless PowerPAK SO-8L package relies heavily on PCB copper area for heat dissipation. Confirm that the application environment meets the specified operating temperature range before finalizing procurement.
Selection Notes
Select this component when a dual N-channel topology is required in a minimal footprint. The 100 V rating suits 12 V and 24 V automotive systems. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient conditions. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-state resistance performance.
Part Context
This part belongs to the SQJB series of automotive MOSFETs from Vishay Siliconix. It shares the PowerPAK SO-8L form factor with other devices in the lineup but offers distinct voltage and current ratings tailored for specific power distribution needs within automotive electronic control modules.
Replacement Considerations
Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume pin-compatible alternatives without validating absolute maximum ratings and thermal characteristics.
