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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 11A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Rds On (Max) @ Id, Vgs：92mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：280pF @ 25V
- Power - Max：27W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJB68EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 100 V drain-source voltage rating and operates up to a junction temperature of 175 °C. The device provides two independent channels, each rated for 11 A continuous drain current at 25 °C case temperature. On-state resistance is specified at 0.092 Ω (max) at VGS = 10 V and 0.117 Ω (max) at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it meets AEC-Q101 standards and undergoes 100% gate charge and single-pulse avalanche testing.
Feature Summary
- Automotive qualification compliant with AEC-Q101 standards
- TrenchFET power MOSFET architecture for optimized performance
- Dual configuration with independent N-channel circuits
- Validated for 100% gate charge and single-pulse avalanche stress
Applications
- Automotive electronic control units requiring high reliability
- Low-side switching applications in vehicle power distribution
- General purpose power switching in harsh thermal environments
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and material compliance. Confirm that the component matches the required package dimensions and pinout for the target PCB layout. Ensure all technical parameters align with the system design requirements before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact surface-mount footprint. Evaluate the on-resistance specifications at the intended gate drive voltage to ensure acceptable conduction losses. Consider the thermal resistance ratings and safe operating area limits relative to the expected load currents and ambient operating conditions.
Part Context
This part belongs to the Vishay Siliconix SQJB series of automotive dual N-channel MOSFETs. The series utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. These devices are designed specifically for demanding automotive applications where space constraints and thermal management are critical factors.
Replacement Considerations
Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package type or voltage ratings. Verify that any alternative component meets the same AEC-Q101 qualification and electrical specifications.
