SQJB70EP-T1_GE3

$0.95

Description：MOSFET 2N-CH 100V 11.3A PPAK SO8
Series：TrenchFET®

SKU:02d1789364de Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 11.3A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：11.3A (Tc)
Rds On (Max) @ Id, Vgs：95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：220pF @ 25V
Power - Max：27W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJB70EP-T1_GE3

Overview

The SQJB70EP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 100 V drain-source voltage rating and a continuous drain current of 11.3 A per leg at 25 °C case temperature. The device exhibits a maximum on-resistance of 95 mΩ at VGS = 10 V and ID = 4 A. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a leadless PowerPAK SO-8L package. The component is AEC-Q101 qualified and undergoes 100% gate resistance and UIS testing.

Feature Summary

Dual N-channel configuration with independent gates for flexible circuit design
AEC-Q101 qualification ensuring reliability for automotive environments
TrenchFET power MOSFET structure optimized for low conduction losses
Leadless PowerPAK SO-8L package designed for efficient thermal dissipation

Applications

Automotive power distribution systems
High-side and low-side switching applications
Motor control circuits
Lighting control modules

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the part number with the latest datasheet revision to confirm technical specifications match project requirements before finalizing orders.

Selection Notes

Select this component when a dual N-channel configuration is required for 100 V automotive applications. Evaluate the thermal resistance characteristics against the PCB layout constraints to ensure adequate heat dissipation. Consider the gate charge and threshold voltage parameters for driver compatibility. Verify that the continuous current ratings align with the expected load conditions under the operating temperature range.

Part Context

This component belongs to the SQJB series of automotive MOSFETs manufactured by Vishay Siliconix. The series utilizes TrenchFET technology to achieve low on-resistance in a compact form factor. The SQJB70EP variant specifically targets dual-channel applications requiring high voltage tolerance and robust performance in demanding automotive environments.