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Product Detailed Parameters
- Description：MOSFET 2N-CH 80V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 25V
- Power - Max：48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJB80EP-T1_BE3 is an automotive-grade, dual N-channel MOSFET utilizing TrenchFET technology. It features a drain-source voltage (VDS) of 80 V and a continuous drain current (ID) of 30 A per leg at 25 °C case temperature. The device offers a maximum on-state resistance (RDS(on)) of 0.019 Ω at VGS = 10 V and 0.024 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L Dual format, it supports junction temperatures up to 175 °C and includes comprehensive avalanche testing.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for optimized performance
- Dual configuration with independent channel control
- Leadless PowerPAK SO-8L package design
Applications
- Automotive power distribution systems
- High-side and low-side switching applications
- Motor control circuits requiring robust thermal management
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the component matches the intended application's voltage and current specifications before procurement. Confirm availability through authorized distributors as supply conditions may vary.
Selection Notes
Select this component for designs requiring high current density in a compact footprint. Evaluate the thermal resistance ratings against the expected PCB copper area and ambient conditions. Consider the gate charge characteristics when designing drive circuits for optimal switching speeds.
Part Context
This part belongs to the SQJB series of dual N-channel MOSFETs from Vishay Siliconix. It shares the PowerPAK SO-8L Dual package form factor with other variants in the lineup but differs in voltage and current ratings. The series is designed for automotive and industrial applications demanding high reliability.
Replacement Considerations
Direct replacements must match the 80 V rating, 30 A current capacity, and PowerPAK SO-8L Dual package. Verify pinout compatibility and thermal characteristics. Consult Vishay documentation for alternative parts within the SQJB family or comparable offerings from other manufacturers.
