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Product Detailed Parameters
- Description：MOSFET 2N-CH 80V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 25V
- Power - Max：48W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJB80EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a drain-source voltage of 80 V and a continuous drain current of 30 A per leg at 25 °C case temperature. The device achieves a maximum on-resistance of 0.019 Ω at VGS = 10 V and 0.024 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it supports junction temperatures up to 175 °C and includes a body diode with a reverse recovery time of 80 ns maximum.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for low conduction losses
- Leadless PowerPAK SO-8L package optimized for thermal performance
Applications
- Automotive power distribution systems
- High-side and low-side switching applications
- Motor control circuits
Procurement Notes
Verify the specific suffix against official documentation to confirm compliance requirements. Ensure that the ordering information matches the exact package type and lead-free specifications required by the design. Cross-reference the manufacturer's latest datasheet revision to validate all electrical parameters before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact surface-mount footprint. Evaluate the thermal resistance characteristics against the application's heat dissipation needs. Confirm that the gate drive voltage meets the threshold requirements for optimal on-state resistance performance under operating conditions.
Part Context
This part belongs to the Vishay Siliconix SQJB series of automotive MOSFETs. It is designed specifically for high-reliability applications requiring robust switching capabilities. The PowerPAK SO-8L package provides enhanced thermal management compared to traditional packages.
Replacement Considerations
Consult the manufacturer's cross-reference guide for verified substitutes. Ensure any replacement maintains the same voltage, current, and thermal ratings. Verify pin compatibility and package dimensions to prevent PCB layout issues.
