SQJQ960EL-T1_GE3

$2.69

Description：MOSFET 2N-CH 60V 63A PPAK8X8
Series：TrenchFET®

SKU:91dd35792c73 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 63A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：63A (Tc)
Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1950pF @ 25V
Power - Max：71W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® 8 x 8 Dual
Supplier Device Package：PowerPAK® 8 x 8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJQ960EL-T1_GE3

Overview

The SQJQ960EL-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and a continuous drain current of 63 A per leg at 25 °C case temperature. The device offers a typical on-state resistance of 9 mΩ at VGS = 10 V and 13 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK 8 x 8L footprint, it supports junction temperatures up to 175 °C and includes a single-pulse avalanche energy rating of 34 mJ.

Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET architecture for optimized performance
100% tested for both RDS(on) and Unclamped Inductive Switching (UIS)
Lead-free construction with material compliance definitions

Applications

Automotive power distribution systems
High-current DC-DC converter stages
Motor control applications requiring low on-resistance

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape-and-reel specifications. Ensure that the component meets the required RoHS directives and material categorization standards for your manufacturing process. Cross-reference the datasheet revision date to confirm the validity of the electrical parameters provided.

Selection Notes

Evaluate the thermal resistance characteristics, specifically the junction-to-case rating, to ensure adequate heat dissipation for the intended load conditions. Consider the gate charge requirements relative to the driving circuit capabilities to optimize switching speeds. Verify that the PCB pad pattern matches the PowerPAK 8 x 8L outline dimensions for proper solder joint formation.

Part Context

This component belongs to the Vishay Siliconix SQJQ series of automotive dual N-channel MOSFETs. It is designed for high-efficiency power switching applications where low conduction losses are critical. The device integrates two independent channels within a compact surface-mount package to minimize board space while maintaining high current handling capabilities.