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Product Detailed Parameters
- Description：MOSFET 2N-CH 80V 36A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：36A (Tc)
- Rds On (Max) @ Id, Vgs：13.5mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1995pF @ 40V
- Power - Max：187W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 8 x 8 Dual
- Supplier Device Package：PowerPAK® 8 x 8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJQ980EL-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a drain-source voltage of 80 V and supports continuous drain currents up to 36 A per leg at 25 °C. The device offers low on-state resistance, typically 13.5 mΩ at VGS = 10 V and 17 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK 8 x 8L format, it operates within a junction temperature range of -55 °C to +175 °C. The component is fully Pb-free, AEC-Q101 qualified, and subjected to 100% Rg and UIS testing for reliability.
Feature Summary
- AEC-Q101 qualified for automotive electronic applications
- TrenchFET power MOSFET technology for optimized performance
- Leadless PowerPAK 8 x 8L package design
- 100% Rg and UIS tested for quality assurance
Applications
- Automotive power management systems
- High-side and low-side switching circuits
- Motor control applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the part marking with the datasheet to validate the component identity before integration into production lines.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade switching capabilities with high current handling. Evaluate thermal management strategies based on the specified junction-to-case resistance. Confirm that gate drive voltages align with the threshold specifications to ensure optimal conduction characteristics under varying load conditions.
Part Context
This component belongs to the Vishay Siliconix SQJQ series, which focuses on automotive-grade power MOSFETs. The series utilizes advanced TrenchFET technology to deliver high efficiency and reliability. The SQJQ980EL specifically targets applications demanding high current density and low on-resistance within a compact footprint suitable for modern automotive electronics.
Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Do not assume compatibility with other series without validating pin configurations and electrical parameters.
