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SQM40N15-38_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 150V 40A TO263. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SQM40N15-38_GE3
- Description：MOSFET N-CH 150V 40A TO263
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3390 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：166W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for SQM40N15-38_GE3
Single FETs, MOSFETs Overview
The SQM40N15-38_GE3 is an automotive-grade N-channel MOSFET utilizing TrenchFET technology. It features a 150 V drain-source voltage and a continuous drain current of 40 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.038 Ω at VGS = 10 V and 0.040 Ω at VGS = 6 V. It supports a junction temperature range from -55 °C to +175 °C and includes single pulse avalanche energy ratings of 80 mJ. The component is housed in a TO-263 package with low thermal resistance.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for optimized performance
- 100% gate resistance and unclamped inductive switching tested
- Halogen-free construction compliant with IEC 61249-2-21
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- High-side load switch applications
- Motor control circuits requiring high voltage tolerance
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix GE3 confirms lead-free and halogen-free compliance as stated in the ordering information. Confirm that the TO-263 package dimensions match the target PCB footprint requirements. Ensure the application environment stays within the specified -55 °C to +175 °C operating junction temperature range to maintain device integrity and electrical specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a 150 V rating is required for automotive environments. The low on-resistance supports efficient power handling in high-current scenarios. Verify that the gate drive voltage meets the minimum threshold for the desired on-state resistance level. Consider the thermal management capabilities provided by the TO-263 package for the expected power dissipation levels.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix SQM series of automotive N-channel MOSFETs. The series utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. These components are designed specifically for demanding automotive applications requiring high reliability and robustness against transient conditions.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative parts offering similar 150 V ratings and comparable RDS(on) values. Ensure any substitute maintains the TO-263 package outline for mechanical compatibility. Verify that replacement devices also meet AEC-Q101 qualification if automotive certification is mandatory for the design.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
