SQP60N06-15_GE3

Description：MOSFET N-CH 60V 56A TO220AB
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tube

SKU:ad536b0d0306 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SQP60N06-15_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 56A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQP60N06-15_GE3

Description：MOSFET N-CH 60V 56A TO220AB
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2480 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：107W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for SQP60N06-15_GE3

SQP60N06-15_GE3

Single FETs, MOSFETs Overview

The SQP60N06-15_GE3 is an automotive-grade N-channel Power MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and a continuous drain current of 56 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.015 Ω at VGS = 10 V. It operates within a junction temperature range of -55 °C to +175 °C and includes avalanche energy ratings of 42 mJ. The component is housed in a TO-220 package with lead-free and halogen-free construction.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET technology for low thermal resistance
100% gate resistance and unclamped inductive switching tested

Single FETs, MOSFETs Applications

Automotive electronic systems requiring high reliability
Power management circuits operating up to 175 °C
General purpose switching applications compatible with TO-220 mounting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance as stated in the datasheet. Confirm that the TO-220 package dimensions match the target PCB footprint. Ensure application requirements align with the absolute maximum ratings provided in the official documentation before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V rating and high current handling capability are required in a through-hole package. Consider the thermal resistance characteristics for heatsinking requirements. Verify that the gate charge and threshold voltage specifications meet the driving circuit capabilities for the intended switching frequency and load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQP series of automotive N-channel MOSFETs. It is designed for robust performance in demanding environments, featuring enhanced ruggedness through comprehensive testing protocols. The series supports various packaging options to accommodate different thermal and spatial constraints in modern electronic designs.