SQP90P06-07L_GE3

Single FETs, MOSFETs Overview

The SQP90P06-07L_GE3 is a Vishay Siliconix automotive-grade P-Channel MOSFET utilizing TrenchFET technology. It features a -60 V drain-source voltage and supports a continuous drain current of -120 A at 25 °C. The device exhibits a maximum on-state resistance of 0.0067 Ω at VGS = -10 V. It operates within a junction temperature range of -55 °C to +175 °C and provides a maximum power dissipation of 300 W. The component is housed in a TO-220AB package with a thermal resistance (junction-to-case) of 0.5 °C/W.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• TrenchFET power MOSFET architecture for low thermal resistance
• 100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

• Automotive load switching applications
• High-current DC-DC converter circuits
• Motor control systems requiring robust avalanche energy handling

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance as stated in the datasheet. Confirm that the TO-220AB package dimensions match your mechanical constraints. Ensure the application environment does not exceed the absolute maximum ratings, particularly regarding pulsed drain current and single pulse avalanche energy limits.

Single FETs, MOSFETs Selection Notes

Select this component when high current capacity and automotive qualification are required. The low thermal resistance facilitates efficient heat dissipation in TO-220AB packages. Consider the negative polarity requirements inherent to P-Channel devices. Evaluate the gate charge specifications against your driver capabilities to ensure optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQP series of automotive P-Channel MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance and improved thermal performance compared to standard planar designs. The series is designed specifically for demanding automotive environments requiring high reliability and ruggedness under varying thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other Vishay Siliconix automotive P-Channel MOSFETs with similar voltage and current ratings, such as the SQM90P06-07L_GE3 or SQD50P04-09L_GE3, provided pinout compatibility and electrical parameters meet the design requirements.