SQW33N65EF-GE3

$3.85

Description：E SERIES POWER MOSFET WITH FAST
Series：E
Mfr：Vishay Siliconix
Package：Bulk

SKU:4b3bdd981344 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQW33N65EF-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is E SERIES POWER MOSFET WITH FAST. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQW33N65EF-GE3

Description：E SERIES POWER MOSFET WITH FAST
Series：E
Mfr：Vishay Siliconix
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：109mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：173 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3972 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：375W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247AD
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for SQW33N65EF-GE3

SQW33N65EF-GE3

Single FETs, MOSFETs Overview

The SQW33N65EF-GE3 is a Vishay Siliconix E Series N-channel Power MOSFET utilizing TrenchFET technology. It features a 700 V drain-source voltage rating and a continuous drain current of 34 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 109 mΩ at VGS = 10 V and a total gate charge up to 173 nC. It supports an operating junction temperature range from -55 °C to +175 °C, offers a power dissipation capacity of 375 W in a TO-247AD package, and is qualified under the AEC-Q101 automotive standard.

Single FETs, MOSFETs Feature Summary

E Series technology providing fast body diode characteristics with reduced reverse recovery time and charge
AEC-Q101 qualification for automotive reliability requirements
TrenchFET structure designed for low figure-of-merit and low switching losses
Unclamped inductive switching (UIS) energy rated capability

Single FETs, MOSFETs Applications

Automotive onboard chargers
Automotive DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance as documented by the manufacturer. Confirm that the TO-247AD package dimensions match the target PCB footprint requirements. Ensure the application environment remains within the specified -55 °C to +175 °C junction temperature limits to maintain device integrity and performance specifications.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability and automotive qualification are required. The TO-247AD package provides robust thermal management for high-power applications. Consider the trade-off between the 109 mΩ on-resistance and the 173 nC gate charge for switching frequency optimization. Validate the unclamped inductive switching ratings against the circuit's inductive load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series, which focuses on optimizing the balance between conduction and switching losses. The SQW prefix indicates a specific product line within the broader portfolio of high-voltage silicon MOSFETs manufactured by Vishay / Siliconix.

Single FETs, MOSFETs Replacement Considerations

SQW61N65EF-GE3

Single FETs, MOSFETs FAQ

Is the SQW33N65EF-GE3 suitable for automotive applications?

Yes, the datasheet explicitly states that the device is AEC-Q101 qualified and lists automotive onboard chargers and DC/DC converters as primary applications.