SQW44N65EF-GE3

$6.60

Description：E SERIES POWER MOSFET WITH FAST
Series：E
Mfr：Vishay Siliconix
Package：Bulk

SKU:15df43958ffe Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQW44N65EF-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is E SERIES POWER MOSFET WITH FAST. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQW44N65EF-GE3

Description：E SERIES POWER MOSFET WITH FAST
Series：E
Mfr：Vishay Siliconix
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：73mOhm @ 22A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：266 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：5858 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：500W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247AD
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for SQW44N65EF-GE3

SQW44N65EF-GE3

Single FETs, MOSFETs Overview

The SQW44N65EF-GE3 is a Vishay Siliconix E Series N-channel enhancement mode power MOSFET utilizing TrenchFET technology. It features a 700 V drain-source voltage rating and a maximum continuous drain current of 47 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 0.063 Ω and a total gate charge of 177 nC. It supports an operating junction temperature up to 175 °C, includes avalanche energy ratings, and meets AEC-Q101 automotive qualification standards.

Single FETs, MOSFETs Feature Summary

Fast body diode implementation using E series technology for reduced reverse recovery time and charge
Low figure-of-merit combining low on-resistance with ultra-low gate charge
Avalanche energy rated capability for robust unclamped inductive switching performance
Automotive grade qualification compliant with AEC-Q101 standards

Single FETs, MOSFETs Applications

Automotive onboard chargers
Automotive DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (S21-0365-Rev. A) against your design requirements. Confirm that the TO-247AD package dimensions align with your thermal management strategy. Ensure component authenticity through authorized distribution channels to guarantee compliance with RoHS and REACH directives.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability and fast switching characteristics are required. The low input capacitance and optimized gate charge reduce driver losses. Consider the thermal derating curves for continuous operation above 25 °C case temperatures to ensure safe operating area limits are not exceeded.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series lineup of power MOSFETs. It utilizes advanced TrenchFET generation technology to achieve superior performance metrics compared to standard planar devices. The product family focuses on minimizing switching losses while maintaining high breakdown voltage capabilities for efficient power conversion.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Vishay E Series parts like SQW33N65EF-GE3 for lower current applications. Verify pinout compatibility and thermal resistance values before substituting. Ensure replacement components meet identical AEC-Q101 qualification requirements if used in automotive contexts.