SRF4427

$1.16

Description：RF TRANS NPN 18V 1.3GHZ 8-SOIC
Series：-

SKU:caf6168684ec Category: Bipolar RF Transistors Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 18V 1.3GHZ 8-SOIC
Series：-
Mfr：Microsemi Corporation
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：18V
Frequency - Transition：1.3GHz
Noise Figure (dB Typ @ f)：-
Gain：17dB ~ 18dB
Power - Max：1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 150mA, 5V
Current - Collector (Ic) (Max)：400mA
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SRF4427

Overview

The SRF4427 is an NPN bipolar RF transistor designed for general-purpose amplifier applications. It features a maximum collector-emitter voltage of 18 Vdc and supports a transition frequency of 1.3 GHz. The device handles up to 1.5 W of power dissipation and operates with a collector current of 400 mA. Packaged in an 8-SOIC surface-mount configuration, it serves as a low-power discrete component suitable for pre-drivers and oscillators.

Feature Summary

NPN bipolar construction optimized for RF signal amplification
Surface-mount packaging for automated assembly integration
Designed for low-power oscillator and pre-driver circuits

Applications

General-purpose RF amplifier stages
Pre-driver circuit implementation
Oscillator design applications

Procurement Notes

Verify the specific manufacturer designation when sourcing, as Microsemi's semiconductor assets are now managed by Macom Technology Solutions Holdings, Inc. Ensure the component matches the original Microsemi specifications for voltage and frequency ratings. Confirm package integrity upon receipt to prevent damage to the surface-mount leads during installation.

Selection Notes

Select this component for applications requiring moderate RF gain at frequencies up to 1.3 GHz. The 1.5 W power rating limits usage to low-power scenarios compared to higher-wattage alternatives. Consider the 8-SOIC footprint for PCB layout compatibility. Evaluate thermal management requirements based on the specified power dissipation limits under continuous operation conditions.

Part Context

This part belongs to the category of bipolar RF transistors intended for discrete low-power microwave applications. It complements other RF components in signal chain designs where linear amplification is required. The technology focuses on providing stable performance in compact form factors for consumer and industrial radio frequency systems.