SS8550-D-AP

Single Bipolar Transistors Overview

The SS8550-D-AP is a PNP silicon transistor in a TO-92 plastic package. It features a collector-emitter breakdown voltage of 25 V, a collector-base voltage of 40 V, and an emitter-base voltage of 6.0 V. The device supports a continuous collector current of 1.5 A with a maximum power dissipation of 1.0 W at 25°C ambient temperature. The DC current gain (hFE) for the D rank ranges from 160 to 300 at IC=100mA and VCE=1.0V. Transition frequency is 190 MHz at IC=50mA. Operating junction temperature spans -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• PNP silicon construction housed in a TO-92 plastic encapsulate case.
• High collector current capability up to 1.5 A.
• Low saturation voltage characteristics for efficient switching.
• Lead-free finish compliant with RoHS standards.

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Switching applications requiring high current drive
• Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official MCC documentation to confirm packaging type and compliance status. The '-AP' designation indicates ammo packing, while other suffixes may alter physical dimensions or environmental ratings. Confirm availability through authorized distributors to ensure genuine parts with full traceability and adherence to quality handling standards.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a minimum hFE of 160 is required. Ensure the application operates within the 25 V collector-emitter limit and 1.0 W power dissipation constraint. Verify that the TO-92 through-hole package fits the PCB layout and thermal requirements compared to surface-mount alternatives.

Single Bipolar Transistors Part Context

This part belongs to the SS8550 series of PNP transistors manufactured by Micro Commercial Components. It serves as a complement to NPN counterparts like the SS8050. The device is designed for general-purpose use in consumer electronics and industrial control systems where reliable switching and amplification are needed.

Single Bipolar Transistors Replacement Considerations

SS8550-C offers a lower hFE range of 120-200. Other manufacturers produce equivalent TO-92 PNP transistors with similar electrical ratings, but pinout and exact parameters must be verified before substitution.

Single Bipolar Transistors FAQ

What is the DC current gain range for the SS8550-D variant?

The DC current gain (hFE) for the SS8550-D ranks from 160 to 300 when measured at IC=100mA and VCE=1.0V.

Is the SS8550-D-AP halogen-free?

Standard parts are not explicitly stated as halogen-free. Halogen-free versions are available upon request by adding the '-HF' suffix to the part number.

What is the maximum power dissipation at 25°C?

The maximum power dissipation is 1.0 Watt at an ambient temperature of 25°C.