SSD2007ASTF

$0.24

Description：MOSFET 2N-CH 50V 2A 8SOIC
Series：-

SKU:976d35558215 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 2A 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：2A
Rds On (Max) @ Id, Vgs：300mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SSD2007ASTF

Overview

The SSD2007ASTF is a dual N-channel power MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It features an extremely low on-state resistance and improved inductive ruggedness. The device operates with a drain-to-source voltage of 50V and continuous drain current of 2.0A at 25°C ambient temperature. Key electrical parameters include a maximum gate threshold voltage of 2.0V and a total gate charge of 8.0nC. The component utilizes a rugged polysilicon gate cell structure for fast switching times and extended safe operating area capabilities.

Feature Summary

Extremely low on-state resistance for efficient power handling
Improved inductive ruggedness and fast switching times
Rugged polysilicon gate cell structure with low input capacitance
Extended safe operating area and improved high-temperature reliability

Applications

Switched-mode power supplies
DC-DC converters
High-frequency power switching circuits

Procurement Notes

Verify the specific ordering suffix 'STF' against official manufacturer documentation to confirm surface-mount tape-and-reel packaging details. Ensure compatibility with standard 8-SOP footprint dimensions during PCB layout. Confirm RoHS compliance status through the latest datasheet revision before final procurement decisions.

Selection Notes

Select this component for applications requiring dual N-channel configurations in compact surface-mount designs. Evaluate thermal resistance characteristics relative to expected ambient temperatures and duty cycles. Compare gate charge specifications against drive circuit capabilities to optimize switching performance and minimize power loss.

Part Context

This part belongs to the SSD2007 series of dual N-channel power MOSFETs from Fairchild Semiconductor, now part of onsemi. The series includes variants such as SSD2009 and SSD2009A, sharing similar functional architectures but differing in specific electrical ratings and package options within the same product family lineage.

Replacement Considerations

Potential substitutes include SSD2009, SSD2009A, and SSD2009ATF from Fairchild/ON Semi. Cross-manufacturer alternatives like ENA2329 or NTMFD4902NF may be considered if pinout and electrical parameters align with design requirements.

FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is 2.0A at an ambient temperature of 25°C.

Does the device include an integral body diode?

Yes, the modified MOSFET symbol indicates an integral reverse P-N junction rectifier (body diode) with specified forward voltage and reverse recovery time characteristics.