SSF2220Y

Overview

The SSF2220Y is a dual N-channel MOSFET manufactured by Good-Ark Semiconductor, housed in an SOT-563 surface-mount package. It features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 800 mA at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 300 mΩ at Vgs=4.5V and Id=0.5A. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 1.0 V max, total gate charge (Qg) of 2 nC max at Vgs=4.5V, and input capacitance (Ciss) of 75 pF max at Vds=10V. Power dissipation is rated at 312 mW at 25°C, with a thermal resistance junction-to-ambient of 400 °C/W.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact SOT-563 package for space-constrained designs.
• Advanced process technology ensures low on-resistance combined with low gate charge to enhance switching efficiency.
• Fast switching capability and reverse body diode recovery characteristics suitable for high-frequency operation.
• ESD protection rating up to 2 kV provides robustness against electrostatic discharge events.

Applications

• High-efficiency switched mode power supplies
• DC/DC converter circuits
• Battery management systems

Procurement Notes

Verify the specific ordering suffix and carrier quantity requirements during procurement. Confirm that the RoHS compliant status aligns with environmental regulations applicable to your manufacturing region. Ensure the tape and reel specifications match your automated assembly equipment capabilities before finalizing orders.

Selection Notes

Select this component when a dual N-channel topology is required in a minimal footprint. The low gate charge supports efficient drive requirements, while the 20 V rating suits low-voltage logic applications. Evaluate the thermal performance relative to the 400 °C/W junction-to-ambient resistance for adequate heat dissipation in the target enclosure.

Part Context

This part belongs to the discrete semiconductor category, specifically within the field-effect transistor family. Good-Ark Semiconductor utilizes advanced MOSFET processing techniques to achieve high cell density, resulting in improved reliability and performance metrics compared to standard alternatives in the same voltage class.

Replacement Considerations

Direct substitutes must match the dual N-channel configuration, SOT-563 package, and 20 V / 800 mA ratings. Verify pinout compatibility and ensure equivalent Rds(on) and Qg values to maintain circuit performance without redesigning the gate drive network.

FAQ

What is the maximum continuous drain current for the SSF2220Y?

The maximum continuous drain current is 800 mA at a case temperature of 25°C.

Does the SSF2220Y include internal ESD protection?

Yes, the device offers ESD protection up to 2 kV.

What is the typical gate threshold voltage range?

The gate threshold voltage ranges from 0.3 V to 1.0 V under specified test conditions.