SSF3714

$0.38

Description：MOSFET N/P-CH 30V 4A SOT23-6L
Series：-

SKU:5548c4cb3dd2 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 4A SOT23-6L
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4A (Tc), 3A (Tc)
Rds On (Max) @ Id, Vgs：30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：500pF @ 25V
Power - Max：2W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-23-6L
Grade：-
Qualification：-

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SSF3714

Overview

The SSF3714 is a complementary N-channel and P-channel MOSFET array in an SOT-23-6L package. It features a 30V drain-source voltage rating with continuous currents of 4A for the N-channel and -3A for the P-channel at 25°C case temperature. The device exhibits low on-resistance, specified as 30mΩ maximum for the N-channel at VGS=10V and 65mΩ maximum for the P-channel at VGS=-10V. Total gate charge reaches up to 8nC, supporting fast switching performance.

Feature Summary

Complementary N-channel and P-channel configuration within a single surface-mount package
Advanced MOSFET process technology designed for high cell density and low on-resistance
Fast switching capability combined with reverse body recovery characteristics
Low gate charge values optimized for high efficiency switched mode power supplies

Applications

High efficiency switched mode power supplies
DC/DC converter circuits
Power management modules requiring compact complementary transistor pairs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging quantity and reel specifications. Ensure the component status remains active for new designs. Cross-reference the datasheet revision date to validate electrical parameter limits before finalizing procurement orders.

Selection Notes

Select this component when a dual complementary MOSFET solution is required in a minimal footprint. The SOT-23-6L package accommodates both channels, reducing board space compared to discrete single transistors. Evaluate thermal derating curves for applications operating above 25°C case temperatures to ensure current ratings remain within safe limits.

Part Context

This part belongs to the Good-Ark Semiconductor discrete MOSFET portfolio. It serves as a complementary pair solution, integrating both N-type and P-type enhancement-mode field-effect transistors into one assembly. The design targets applications prioritizing switching speed and conduction efficiency in constrained physical spaces.