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SSFD3906 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 80A, 30V,. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SSFD3906
- Description：MOSFET, N-CH, SINGLE, 80A, 30V,
- Series：-
- Mfr：Good-Ark Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.1 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：54W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for SSFD3906
Single FETs, MOSFETs Overview
The SSFD3906 is a 30V N-Channel MOSFET manufactured by Good-Ark Semiconductor. It features an 80A continuous drain current and a maximum on-resistance of 6mΩ at VGS=4.5V. The device utilizes advanced process technology for high cell density, resulting in low gate charge and fast switching capabilities. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-252 (DPAK) package.
Single FETs, MOSFETs Feature Summary
- Advanced MOSFET process technology achieving high cell density
- Low on-resistance combined with low gate charge
- Fast switching performance with reverse body recovery
Single FETs, MOSFETs Applications
- High efficiency switched mode power supplies
- General purpose switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific manufacturer documentation for the SSFD3906 to confirm exact electrical tolerances and thermal characteristics before integration. Ensure that the TO-252 package dimensions align with the target PCB footprint design. Cross-reference the datasheet version number to ensure all latest revisions regarding absolute maximum ratings are considered during the procurement phase.
Single FETs, MOSFETs Selection Notes
Select this component when a 30V rating and high current handling capability are required for power conversion circuits. The low on-resistance makes it suitable for minimizing conduction losses in efficient designs. Consider the thermal resistance values provided in the datasheet to determine appropriate heatsinking requirements for the intended operating environment.
Single FETs, MOSFETs Part Context
This component belongs to the category of N-Channel MOSFETs designed for power management. It is engineered to replace older generation devices in applications demanding higher efficiency and faster switching speeds. The TO-252 package provides a balance between current capacity and board space utilization for industrial and consumer electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official distributor databases for verified substitute part numbers from other manufacturers that match the 30V, 80A specifications and TO-252 package constraints.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
