SSFK3220C

$0.18

Description：MOSFET 2N-CH 20V 0.8A SOT363
Series：-

SKU:ac8c46622690 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.8A SOT363
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：800mA (Tc)
Rds On (Max) @ Id, Vgs：300mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：75pF @ 30V
Power - Max：275mW (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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SSFK3220C

Overview

The SSFK3220C is a dual N-channel MOSFET in an SOT-363 package. It features a 20V drain-source voltage and 800mA continuous drain current at 25°C case temperature. The device exhibits low on-resistance, with a maximum of 300mΩ at VGS=4.5V and ID=0.5A. Gate threshold voltage ranges from 0.4V to 1V. Total gate charge is typically 1nC. Power dissipation is 275mW at 25°C. Operating junction temperature spans -55°C to +150°C.

Feature Summary

Dual N-channel configuration within a compact surface-mount package
Low on-resistance optimized for high efficiency switching applications
Fast switching and reverse body recovery characteristics
ESD protection capability up to 2KV

Applications

High efficiency switch mode power supplies
Battery protection circuits
Load switches
DC-DC converters

Procurement Notes

Verify the specific lot marking code corresponding to the production batch when ordering, as indicated by the variable suffix in the device marking. Confirm the tape and reel carrier quantity matches the required packaging specifications for automated assembly lines. Ensure the component datasheet version aligns with the design requirements for thermal and electrical parameters.

Selection Notes

Select this component for designs requiring low voltage operation and minimal footprint. The low gate charge supports efficient drive requirements, particularly suitable for 1.5V gate drive applications. Consider the thermal derating curve for ambient temperature constraints to ensure reliable operation within the specified junction temperature limits.

Part Context

This part belongs to Good-Ark Semiconductor's portfolio of small-signal MOSFETs designed for portable and space-constrained electronics. The SOT-363 package provides a dual-transistor solution that saves board area compared to single discrete components. It targets markets demanding high reliability and low power consumption in consumer and industrial devices.