SSFN3010H

$0.53

Description：MOSFET 2N-CH 30V 10.8A 8DFN
Series：-

SKU:a0d30245236c Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 10.8A 8DFN
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：10.8A (Ta), 19.5A (Tc)
Rds On (Max) @ Id, Vgs：10.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：900pF @ 25V
Power - Max：27W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-WDFN Exposed Pad
Supplier Device Package：8-DFN (3x3)
Grade：-
Qualification：-

Download product information

SSFN3010H

Overview

The SSFN3010H is a dual N-channel MOSFET with a 30V drain-source voltage rating. It features a maximum on-resistance of 10.5mΩ at VGS=10V and a continuous drain current of 19.5A at TC=25°C. The device utilizes an advanced process for high cell density, offering fast switching and reverse body recovery characteristics. Packaged in a DFN3x3 footprint, it is designed for high-efficiency switched mode power supplies.

Feature Summary

Dual N-channel configuration within a compact DFN3x3 package
Advanced MOSFET process technology enabling high cell density
Fast switching performance combined with reverse body recovery
Low on-resistance coupled with low gate charge

Applications

High efficiency switched mode power supplies
General purpose power applications requiring compact form factors

Procurement Notes

Verify the specific ordering suffix to confirm packaging details, as the standard carrier quantity is 3000 pieces per reel. Ensure compliance requirements match the RoHS compliant status documented in the order information section. Confirm that the DFN3x3 package marking DB3010H aligns with your assembly identification protocols before finalizing procurement.

Selection Notes

Select this component when a dual N-channel topology is required within a minimal surface area constraint. The 30V rating and 10.5mΩ RDS(on) make it suitable for low-voltage, high-current DC-DC conversion stages. Evaluate thermal derating curves for ambient temperature conditions exceeding 25°C to ensure the junction temperature remains within safe operating limits during continuous operation.

Part Context

This part belongs to Good-Ark Semiconductor's portfolio of dual MOSFETs designed for space-constrained designs. The DFN3x3 package provides a small footprint while maintaining adequate thermal dissipation capabilities through the exposed pad. It serves as a solution for applications needing two independent channels in a single package.