Single FETs, MOSFETs SSI4N60BTU product image

SSI4N60BTU

$0.49
  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk

SKU:e46e8a45a046 Category: Brand:

  
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SSI4N60BTU is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSI4N60BTU

  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.5Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.13W (Ta), 100W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262 (I2PAK)
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for SSI4N60BTU

SSI4N60BTU

Single FETs, MOSFETs Overview

The SSI4N60BTU is a single N-channel power MOSFET manufactured by Fairchild Semiconductor. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 4A at case temperature. The device utilizes a TO-262 (I2PAK) through-hole package, offering a thermal resistance profile that allows for 3.13W dissipation at ambient temperature and 100W at case temperature. It serves as a substitute for the SSI4N60A in similar applications.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 600V drain-source breakdown rating
  • Robust current handling with 4A continuous drain current specification
  • Through-hole mounting design using the TO-262 package format

Single FETs, MOSFETs Applications

  • Power switching circuits requiring high voltage isolation
  • Industrial motor control systems
  • General-purpose power management applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as Fairchild Semiconductor assets have been acquired by ON Semiconductor. Confirm the specific lot date code and RoHS compliance status directly with the supplier. Ensure the package marking matches the TO-262AA designation to avoid counterfeit components. Request original datasheets for electrical parameter validation before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole solution is required for high-voltage switching tasks. The TO-262 package provides superior thermal performance compared to surface-mount alternatives for certain board layouts. Consider the 4A current limit and 600V rating to ensure adequate safety margins for the intended load conditions and operating environment.

Single FETs, MOSFETs Part Context

This part belongs to the SSI4N60 series of N-channel power MOSFETs from Fairchild Semiconductor. It is specifically designed as a replacement or alternative for the SSI4N60A model. The series targets applications needing reliable high-voltage performance in a durable through-hole package suitable for industrial and consumer electronics.

Single FETs, MOSFETs Replacement Considerations

The SSI4N60B is documented as a related variant within the same series. Verify pinout compatibility and exact Rds(on) values when substituting with other models from the SSI4N60 family or equivalent parts from different manufacturers.

SSI4N60BTUSSI4N60BTU
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