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SSI4N60BTU is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
The SSI4N60BTU is a single N-channel power MOSFET manufactured by Fairchild Semiconductor. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 4A at case temperature. The device utilizes a TO-262 (I2PAK) through-hole package, offering a thermal resistance profile that allows for 3.13W dissipation at ambient temperature and 100W at case temperature. It serves as a substitute for the SSI4N60A in similar applications.
Verify the manufacturer origin, as Fairchild Semiconductor assets have been acquired by ON Semiconductor. Confirm the specific lot date code and RoHS compliance status directly with the supplier. Ensure the package marking matches the TO-262AA designation to avoid counterfeit components. Request original datasheets for electrical parameter validation before finalizing procurement decisions.
Select this component when a through-hole solution is required for high-voltage switching tasks. The TO-262 package provides superior thermal performance compared to surface-mount alternatives for certain board layouts. Consider the 4A current limit and 600V rating to ensure adequate safety margins for the intended load conditions and operating environment.
This part belongs to the SSI4N60 series of N-channel power MOSFETs from Fairchild Semiconductor. It is specifically designed as a replacement or alternative for the SSI4N60A model. The series targets applications needing reliable high-voltage performance in a durable through-hole package suitable for industrial and consumer electronics.
The SSI4N60B is documented as a related variant within the same series. Verify pinout compatibility and exact Rds(on) values when substituting with other models from the SSI4N60 family or equivalent parts from different manufacturers.
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