SSM14N956L,EFF

Overview

The SSM14N956L,EFF is a silicon N-channel MOSFET array featuring a common-drain configuration, designed for battery protection circuits. It operates with a source-source voltage rating of 12 V and supports a continuous DC source current of 20.0 A. The device exhibits low on-resistance, typically 1.0 mΩ at VGS = 4.5 V and 1.1 mΩ at VGS = 3.8 V. Packaged in the compact TCSPED-302701 surface-mount format, it ensures RoHS compatibility and halogen-free construction. The component functions within an ambient temperature range of -55°C to 150°C, with a maximum channel temperature of 150°C.

Feature Summary

• Common-drain architecture facilitates integration into battery protection circuitry.
• Ultra-low on-resistance minimizes power loss during operation.
• Compact TCSPED-302701 package enables high-density board layouts.

Applications

• Battery protection circuits
• Lithium-ion battery charge and discharge control

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging type and compliance status. Ensure that the procurement channel provides valid traceability for the component's manufacturing origin. Confirm that the received units match the exact part number designation to avoid functional mismatches in sensitive battery management designs.

Selection Notes

Select this component when designing lithium-ion battery protection systems requiring a 12 V rated N-channel MOSFET with a 20 A continuous current capability. The common-drain topology is specifically suited for these applications. Evaluate thermal dissipation requirements based on the 1.33 W power dissipation limit under standard test conditions to ensure reliable operation.

Part Context

This device belongs to Toshiba’s portfolio of small, thin MOSFETs utilizing proprietary micro-process technology. It serves as a successor or variant within the SSM series, optimized for mobile devices and portable electronics where space constraints and energy efficiency are critical design parameters.

Replacement Considerations

The SSM10N954L is a documented related product from Toshiba sharing similar processing technology and application scope. Verify electrical parameter differences, such as lower current ratings in the alternative model, before substituting in existing designs.

FAQ

What is the typical gate threshold voltage for the SSM14N956L?

The typical gate threshold voltage (Vth) is 0.9 V, with a maximum specified value of 1.4 V at a source current of 1.57 mA.

Does the SSM14N956L support pulsed current operations?

Yes, the absolute maximum ratings specify a pulsed source current (ISP) of 200 A, provided the pulse width is less than or equal to 10 µs and the duty cycle is limited to 1%.

What is the total gate charge characteristic of this MOSFET?

The typical total gate charge (Qg) is 76 nC, measured under conditions of VDD = 6 V, IS = 20.0 A, and VGS = 4.0 V.