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SSM3J64CTC,L3F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET P-CH 12V 1A CST3C. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SSM3J64CTC,L3F
- Description：MOSFET P-CH 12V 1A CST3C
- Series：U-MOSVII
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：370mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：CST3C
- Package / Case：SC-101, SOT-883
Single FETs, MOSFETs datasheet and documents for SSM3J64CTC,L3F
Single FETs, MOSFETs Overview
The SSM3J64CTC,L3F is a single P-channel enhancement-mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSVII technology and is housed in a CST3C surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 12 V, a continuous drain current of 1 A at ambient temperature, and a maximum power dissipation of 500 mW.
Single FETs, MOSFETs Feature Summary
- Built on U-MOSVII silicon gate technology for reliable performance
- Designed for surface-mount assembly in compact electronic circuits
- Features a single-channel P-configuration for signal or power switching
Single FETs, MOSFETs Applications
- Battery protection circuits
- Power management modules
- Small-signal switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to ensure the correct tape and reel configuration matches your automated assembly requirements. Confirm that the CST3C footprint aligns with your PCB design guidelines. Cross-reference the manufacturer's latest datasheet for any updates to mechanical dimensions or thermal characteristics before finalizing component selection.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage P-channel switch is required within a minimal footprint. The 12 V rating suits battery-powered systems, while the 1 A current capability supports moderate load switching. Ensure the application operates within the specified junction temperature range and accounts for the 500 mW power dissipation limit under expected thermal conditions.
Single FETs, MOSFETs Part Context
This device belongs to the SSM3J series of small-signal MOSFETs from Toshiba. The series offers various voltage and current ratings packaged in space-saving formats like CST3C. These components are engineered for general-purpose switching tasks in portable electronics and consumer devices where board real estate is limited.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 12 V P-channel specification and CST3C package. Verify equivalent Rds(on) and current handling capabilities. Consult Toshiba documentation for approved pin-compatible alternatives within the same product family.
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