SSM3K35MFV,L3F

Description：MOSFET N-CH 20V 180MA VESM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:763bbb8e1541 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

SSM3K35MFV,L3F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 20V 180MA VESM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSM3K35MFV,L3F

Description：MOSFET N-CH 20V 180MA VESM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4V
Rds On (Max) @ Id, Vgs：3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id：1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：9.5 pF @ 3 V
FET Feature：-
Power Dissipation (Max)：150mW (Ta)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：VESM
Package / Case：SOT-723

Single FETs, MOSFETs datasheet and documents for SSM3K35MFV,L3F

SSM3K35MFV,L3F

Single FETs, MOSFETs Overview

The SSM3K35MFV,L3F is an N-channel MOSFET from Toshiba's U-MOSIII series, housed in a VESM (SOT-723) surface-mount package. It features a drain-source voltage of 20 V and a continuous drain current of 250 mA at 25°C ambient temperature. Key electrical parameters include a maximum gate-source voltage of ±10 V, a threshold voltage of 1 V @ 100µA, and a maximum on-resistance of 1.1 Ω @ 150mA, 4.5V. The device has a maximum power dissipation of 500 mW, input capacitance of 36 pF @ 10 V, and gate charge of 0.34 nC @ 4.5 V. It operates up to a junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

High-speed switching capability for efficient signal control
Analog switch application suitability due to low gate charge
Compact surface-mount design for space-constrained circuits

Single FETs, MOSFETs Applications

High-speed switching applications
Analog switch circuits
Industrial control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix L3F corresponds to the required tape-and-reel packaging configuration. Confirm RoHS3 compliance status matches project requirements. Ensure the VESM package footprint aligns with the PCB layout specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact N-channel MOSFET with 20 V rating. It is suitable where low gate charge facilitates fast switching speeds. Consider the 250 mA current limit and 500 mW power dissipation when determining thermal management needs for the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's U-MOSIII family of single MOSFETs. It shares the SSM3K35 base designation with variants like SSM3K35CT,L3F and SSM3K35MFV. The MFV suffix specifically denotes the VESM (SOT-723) package type, distinguishing it from other package options within the same electrical performance family.