SSM3K56ACT,L3F

Single FETs, MOSFETs Overview

The SSM3K56ACT,L3F is a single N-channel enhancement mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOS VII-H technology to achieve low on-resistance suitable for high-speed switching applications. The device features a maximum drain-source voltage of 20 V and a gate-source voltage rating of ±8 V. Key electrical parameters include a maximum RDS(on) of 235 mΩ at VGS = 4.5 V, 300 mΩ at VGS = 2.5 V, 480 mΩ at VGS = 1.8 V, and 840 mΩ at VGS = 1.5 V. It is housed in a compact SOT-883 (CST3) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Low ON-resistance optimized for 1.5 V gate drive operation
• High-speed switching capability via U-MOS VII-H generation technology
• Compact SOT-883 surface-mount package design

Single FETs, MOSFETs Applications

• High-speed switching circuits
• Power management switches
• Battery protection circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L3F to confirm tape-and-reel packaging quantities and lead times directly with authorized distributors or the manufacturer. Ensure the component matches the required RoHS compliance status for your assembly process. Cross-reference the datasheet revision date to confirm parameter stability before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance at reduced gate voltages is critical for efficiency. The 20 V breakdown voltage suits low-voltage DC-DC converters and load switches. Verify that the thermal dissipation requirements fit within the SOT-883 package limits for the intended ambient temperature and current load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's small signal MOSFET portfolio designed for portable electronics and power management. The SOT-883 package provides a small footprint for space-constrained designs. It complements other devices in the series offering various current and resistance ratings for different switching speeds and voltage levels.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the SSM3K56 series or equivalent U-MOS VII-H devices from Toshiba. Verify pinout compatibility and ensure replacement parts meet the same RDS(on) thresholds at identical gate drive voltages.