SSM6K810R,LF

Single FETs, MOSFETs Overview

The SSM6K810R,LF is a single N-channel small signal MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and is housed in a TSOP-6F surface-mount package. The device features a drain-source breakdown voltage (Vds) of 100 V and a continuous drain current (Id) of 3.5 A. Key electrical parameters include a gate-source voltage (Vgs) rating of +/-20 V, a typical on-resistance (Rds(on)) of 69 mOhms at 4.5 V, and a gate charge (Qg) of 3.2 nC. The component supports an enhancement mode operation with a threshold voltage (Vgs(th)) of 2.5 V, power dissipation of 3 W, and a maximum operating temperature of +175 C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 100 V drain-source breakdown voltage for robust circuit protection
• Low on-resistance design to minimize conduction losses in switching applications
• Compact TSOP-6F surface-mount package suitable for space-constrained PCB layouts

Single FETs, MOSFETs Applications

• Voltage translation and level shifting circuits
• General-purpose switching applications requiring high voltage tolerance
• Small signal amplification stages

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the LF suffix to ensure lead-free compliance and specific manufacturing lot details. Confirm that the TSOP-6F package dimensions align with your PCB footprint requirements. Cross-reference the datasheet revision date to ensure compatibility with your design specifications regarding thermal and electrical limits.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with 100 V blocking capability is required in a compact surface-mount form factor. The low gate charge and moderate on-resistance make it suitable for efficient switching at moderate frequencies. Ensure the application voltage does not exceed the 100 V Vds rating and that the drive voltage remains within the +/-20 V Vgs limit.

Single FETs, MOSFETs Part Context

This component belongs to Toshiba's small signal MOSFET portfolio, designed for general-purpose electronic applications. The SSM6K series typically offers a balance of performance and packaging efficiency. As a silicon-based device, it provides reliable operation across a wide temperature range, fitting into standard transistor categories for discrete semiconductor solutions.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba documentation or authorized distributors for verified substitute part numbers. Do not assume functional equivalence based solely on package type or generic specifications. Verify all critical parameters against the original datasheet before implementation.