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SSM6K824R,LF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is N-CH MOSFET 20V, +/-8V, 6A ,0.03. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SSM6K824R,LF
- Description：N-CH MOSFET 20V, +/-8V, 6A ,0.03
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：33mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.6 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：410 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-TSOP-F
- Package / Case：6-SMD, Flat Leads
Single FETs, MOSFETs datasheet and documents for SSM6K824R,LF
Single FETs, MOSFETs Overview
The SSM6K824R,LF is a small signal N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes Silicon technology and is housed in a TSOP-6F surface-mount package. The device features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 3.5 A. Key electrical characteristics include a gate-source voltage rating of +/- 20 V, a maximum power dissipation of 3 W, and an operating temperature range extending up to +175 C.
Single FETs, MOSFETs Feature Summary
- Designed for high-speed switching applications within compact form factors
- Utilizes U-MOS VI technology for enhanced performance
- Capable of operation at elevated temperatures up to 175 C
Single FETs, MOSFETs Applications
- Level shifters
- Voltage translation circuits
- Small-signal switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm exact packaging configuration and lead time requirements. Ensure compatibility with RoHS directives if applicable to your manufacturing standards. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel MOSFET with 100 V breakdown voltage and 3.5 A current capacity is required in a TSOP-6F package. Consider its low gate charge and fast switching times for efficient level shifting or logic interface applications where space constraints necessitate a small surface-mount footprint.
Single FETs, MOSFETs Part Context
This component belongs to Toshiba's lineup of small-signal MOSFETs designed for general-purpose switching and amplification. It is part of a broader family of devices optimized for low on-resistance and high reliability in consumer electronics and industrial control systems requiring compact transistor solutions.
Single FETs, MOSFETs Replacement Considerations
Consult official Toshiba substitution guides for verified equivalents. Generic replacements may not match the specific thermal characteristics or switching speeds of the original component.
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