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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.1A ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：3Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：9.3pF @ 3V
- Power - Max：150mW
- Operating Temperature：150°C (TA)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
- Grade：-
- Qualification：-
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Overview
The SSM6L16FETE85LF is a dual-channel MOSFET from Toshiba Semiconductor and Storage, integrating one N-channel and one P-channel device in a compact SOT-353-5 package. It utilizes π-MOSVI technology for high-speed switching applications. The N-channel Q1 offers a maximum drain-source on-resistance of 4 Ω at VGS = 2.5 V, while the P-channel Q2 provides a maximum RDS(ON) of 12 Ω at VGS = -2.5 V. Both channels support a drain-source voltage (VDSS) of ±20 V and a continuous DC drain current of ±100 mA. Total power dissipation is rated at 150 mW.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs into a single small package to reduce footprint.
- Features low on-resistance optimized for operation at gate-source voltages as low as 2.5 V.
- Designed for high-speed switching and analog switching applications with fast turn-on and turn-off times.
Applications
- High-speed switching circuits
- Analog switching applications
Procurement Notes
Verify the specific ordering suffix TE85LF against official Toshiba documentation to confirm reel packaging specifications. Ensure the component meets RoHS requirements for the target market. Confirm that the SOT-353-5 package dimensions align with the PCB layout constraints before finalizing procurement.
Selection Notes
Select this component when a complementary N/P pair is required in a minimal footprint. The device is suitable for low-voltage logic interfaces operating around 2.5 V or 3 V. Consider the 150 mW total power dissipation limit and ensure adequate thermal management on the FR4 board. Verify that the 20 V breakdown voltage is sufficient for the specific circuit rails.
Part Context
This part belongs to the SSM6L16FE series manufactured by Toshiba Semiconductor and Storage. It is a silicon P/N channel MOS type field effect transistor built on π-MOSVI technology. The standard commercial production for this series began in March 2002.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided datasheet. Designers should evaluate other dual MOSFETs in SOT-353 packages with similar VDSS ratings and comparable RDS(ON) characteristics at low VGS levels.
