SSM6L35FE,LM

$0.28

Description：MOSFET N/P-CH 20V 0.18A ES6
Series：-

SKU:519a383e0352 Category: FET, MOSFET Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.18A ES6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：180mA, 100mA
Rds On (Max) @ Id, Vgs：3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id：1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：9.5pF @ 3V
Power - Max：150mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：ES6
Grade：-
Qualification：-

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SSM6L35FE,LM

Overview

The SSM6L35FE,LM is a dual N-channel small signal MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSIII technology within a UF-6 surface-mount package. The device features a drain-source breakdown voltage of 20 V. Continuous drain current ratings are specified at 0.1 A for the N-channel configuration. The maximum gate-source voltage is ±8 V. The component operates within a temperature range from -55 °C to +150 °C. Power dissipation is rated at 200 mW. The unit includes an internal diode structure.

Feature Summary

Dual N-channel configuration in a compact UF-6 package
U-MOSIII technology for enhanced switching performance
Integrated body diode structure

Applications

Signal switching circuits
Low-power logic level interfaces
Battery protection modules

Procurement Notes

Verify the exact suffix against official Toshiba documentation to confirm pinout and electrical tolerances. Ensure the ordering code matches the specific tape and reel requirements for automated assembly lines. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement contracts.

Selection Notes

Select this component for applications requiring low-voltage signal switching with minimal footprint constraints. The UF-6 package offers thermal efficiency suitable for dense PCB layouts. Verify that the 20 V rating exceeds the maximum circuit voltage under all transient conditions. Consider the 0.1 A current limit when designing load paths.

Part Context

This part belongs to Toshiba's SSM6L series of dual MOSFETs designed for portable electronics. The series emphasizes low on-resistance and fast switching speeds. The UF-6 package is standard for space-constrained mobile devices. This specific variant integrates two N-channel devices for simplified circuit design.

Replacement Considerations

Check Toshiba's official cross-reference list for verified equivalents. Ensure any substitute maintains the UF-6 footprint and 20 V rating. Verify compatibility with existing gate drive voltages and thermal management requirements.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.