SSM6L36TU,LF

Overview

The SSM6L36TU,LF is a dual N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes the U-MOSIII technology within a UF-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and continuous drain currents (Id) of 500 mA for one channel and 1.4 A for the other. On-resistance (Rds(on)) values are specified at 630 mOhms and 226 mOhms respectively. Gate-source voltage limits range from -20 V to +20 V, with threshold voltages between 1 V and 2 V. Total power dissipation is rated at 500 mW, operating within a temperature range of -55°C to +150°C.

Feature Summary

• Dual N-channel configuration in a compact UF-6 package
• U-MOSIII technology for low on-resistance performance
• AEC-Q101 qualified for automotive reliability standards

Applications

• Automotive signal switching circuits
• General-purpose low-side switching applications
• Battery protection circuits in mobile devices

Procurement Notes

Verify the specific suffix LF for lead-free compliance and confirm the UF-6 package variant matches design requirements. Ensure the ordering code aligns with Toshiba Semiconductor and Storage official distribution channels to guarantee authenticity and traceability.

Selection Notes

Select this component when a dual N-channel solution is required in a small footprint. Compare Rds(on) and Id ratings against load requirements. Verify thermal management capabilities given the 500 mW power dissipation limit in the UF-6 package.

Part Context

This part belongs to the SSM6L series of dual MOSFETs from Toshiba. It shares the UF-6 package form factor with related models like SSM6L40TU but differs in channel polarity and current ratings compared to P-channel or higher-current variants.

Replacement Considerations

Check for direct pin-compatible alternatives within the Toshiba SSM6L family. Verify that substitute parts meet the same AEC-Q101 qualification and electrical specifications for Vds, Id, and Rds(on).