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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4A 6UDFN
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-UDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The SSM6L61NU,LF is a small-signal MOSFET array manufactured by Toshiba Semiconductor and Storage. It integrates one N-channel and one P-channel MOSFET in a single package. The device supports a continuous drain current of 4A for both channels. It features a logic-level gate design compatible with 1.8V drive voltages. The component utilizes a compact 6-WDFN (2x2) surface-mount package with an exposed pad for thermal dissipation. It operates at a maximum junction temperature of 150°C and includes an integrated diode configuration within the dual structure.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a single compact package to reduce board space.
- Features logic-level gate threshold voltage enabling direct drive from low-voltage control signals such as 1.8V.
- Includes an integrated body diode structure suitable for synchronous rectification or freewheeling applications.
Applications
- High-speed switching circuits in portable consumer electronics
- DC-DC converter power stages requiring compact dual-MOSFET solutions
- Motor driver interfaces for small DC motors
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the requested quantity aligns with standard shipping units defined in the product documentation. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this component when system design requires a matched N-channel and P-channel pair in a minimal footprint. Ensure the application voltage does not exceed the rated drain-source voltage limits. Verify that the gate drive signal amplitude meets the logic-level requirements for optimal conduction. Consider the thermal performance of the 6-WDFN package relative to the expected power dissipation in the target environment.
Part Context
This component belongs to Toshiba's lineup of small-signal MOSFET arrays designed for high-density integration. It is engineered to replace discrete dual-MOSFET setups, thereby simplifying layout and improving switching consistency between paired devices. The series targets applications demanding low profile and efficient power management in space-constrained electronic systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative dual MOSFET arrays from other manufacturers only if they match the pinout, voltage ratings, and package dimensions exactly. Verify functional equivalence through detailed parameter comparison before implementation.
