SSM6L807R,LF

Overview

The SSM6L807R,LF is a dual MOSFET component integrating N-channel and P-channel configurations within a single TSOP6F package. It supports drain-source voltages of 30 V for the N-channel and -20 V for the P-channel. The device provides continuous drain currents of 4 A for both channels. On-resistance values are specified at 0.0391 Ω at 4.5 V gate drive and 0.045 Ω at 10 V gate drive. This configuration facilitates miniaturization and low power consumption in consumer and industrial equipment applications.

Feature Summary

• Integrates N-channel and P-channel MOSFETs into a single compact package to reduce board space.
• Features flat leads in the TSOP6F package to enhance chip-mounting capability.
• Provides nearly equivalent on-resistance values between the P-channel and N-channel for balanced performance.

Applications

• Consumer equipment requiring miniaturized power management switches
• Industrial equipment utilizing low power consumption switching solutions
• General purpose logic IC level shifting interfaces

Procurement Notes

Verify the RoHS3 compliance status and Moisture Sensitivity Level (MSL) classification as documented in official Toshiba datasheets. Confirm the specific ordering suffix corresponds to the lead-free variant. Ensure the TSOP6F package dimensions match the target PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when system design requires a complementary N/P-channel pair in a minimal footprint. The TSOP6F package offers enhanced mounting reliability compared to standard variants. Evaluate the 30 V and -20 V voltage ratings against the maximum circuit operating conditions to ensure adequate headroom for reliable operation.

Part Context

This part belongs to Toshiba's Dual MOSFET series designed for miniaturization and low power consumption. It complements other products like the SSM6L826R, which shares similar packaging characteristics but may differ in specific electrical parameters. The series targets applications demanding high integration density in power management circuits.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by cross-referencing pinout configurations and electrical specifications with alternative dual MOSFET offerings from the manufacturer.