SSM6N15AFE,LM

$0.26

Description：MOSFET 2N-CH 30V 0.1A ES6
Series：-

SKU:e604a187fc02 Category: FET, MOSFET Arrays Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.1A ES6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：100mA
Rds On (Max) @ Id, Vgs：4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：13.5pF @ 3V
Power - Max：150mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：ES6
Grade：-
Qualification：-

Download product information

SSM6N15AFE,LM

Overview

The SSM6N15AFE,LM is a dual N-channel small-signal MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSIII-H technology within an ES6-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 100 mA. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±20 V, a typical on-resistance (Rds(on)) of 3.6 Ohms, and a gate threshold voltage (Vgs(th)) of 800 mV. Power dissipation is rated at 300 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

Dual N-channel configuration in a compact ES6-6 package for space-constrained designs.
U-MOSIII-H technology provides enhanced switching performance and reliability.
High thermal stability supports operation up to +150°C junction temperature.

Applications

Load switching applications
Small signal amplification circuits
General-purpose low-power switching

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm pinout compatibility and RoHS status. Ensure the ES6-6 package variant matches the target PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET with 30 V rating and 100 mA current capacity is required. The 3.6 Ohm Rds(on) suits low-current applications where moderate conduction loss is acceptable. Verify that the 800 mV threshold voltage aligns with the system logic levels.

Part Context

This part belongs to the SSM6N15 series of dual N-channel MOSFETs. It shares the same electrical specifications as the SSM6N15AFU,LF but utilizes the ES6-6 package instead of the SOT-363-6 package. Both variants are designed for similar low-power switching tasks.

Replacement Considerations

The SSM6N15AFU,LF is a functional equivalent with identical electrical characteristics but uses an SOT-363-6 package. Direct substitution requires verifying that the ES6-6 footprint can accommodate the alternative package or that the PCB layout supports both form factors.