SSM6N17FU(TE85L,F)

$0.34

Description：MOSFET 2N-CH 50V 0.1A US6
Series：-

SKU:096c7afcf680 Category: FET, MOSFET Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.1A US6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Rds On (Max) @ Id, Vgs：20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：7pF @ 3V
Power - Max：200mW (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：US6
Grade：-
Qualification：-

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SSM6N17FU(TE85L,F)

Overview

The SSM6N17FU is a dual N-channel silicon MOSFET designed for high-speed switching and analog applications. It features a 50 V drain-source breakdown voltage and a continuous drain current of 100 mA. The device exhibits a typical drain-source on-resistance of 12 Ω at VGS = 4 V, with a gate threshold voltage ranging from 0.9 V to 1.5 V. Packaged in the compact SC-70 (SOT-363) format, it supports surface mount installation. Key electrical parameters include a maximum gate-source voltage of ±7 V, a power dissipation rating of 200 mW, and switching times of approximately 100 ns for turn-on and 40 ns for turn-off under specified test conditions.

Feature Summary

Dual configuration integrates two independent N-channel MOSFETs within a single compact package to support high-density mounting requirements.
High-speed switching capability enables efficient operation in applications requiring rapid signal transitions and low latency.
Robust voltage ratings provide a 50 V drain-source breakdown limit suitable for various low-voltage circuit protection and control tasks.

Applications

High-speed switching circuits
Analog switch applications

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer marking code 'TOSHIBA 2-2J1C' against official Toshiba Semiconductor documentation. Confirm that the physical package matches the SC-70 (JEDEC/SOT-363) specification and validate the part number suffix against authorized distributor catalogs to ensure correct ordering specifications.

Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. Ensure the design accommodates the 100 mA continuous current limit and verify that the thermal management strategy supports the 200 mW power dissipation rating. Check that the gate drive voltage aligns with the specified threshold range for optimal conduction characteristics.

Part Context

This device belongs to the Toshiba SSM6N series of small-signal MOSFETs. It utilizes silicon technology and is housed in an SC-70 package. The product line targets consumer electronics and portable devices where space constraints and switching efficiency are critical design factors.

Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Do not assume functional equivalence with other dual MOSFET packages without validating pinout compatibility and electrical parameter limits.