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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.5A UF6
- Series：U-MOSIII
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：145mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：245pF @ 10V
- Power - Max：500mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：UF6
- Grade：-
- Qualification：-
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Overview
The SSM6N24TU,LF is a dual N-channel silicon MOSFET from Toshiba Semiconductor and Storage, utilizing U-MOSIII technology. It features a UF-6 (SOT-363F) surface-mount package with a typical weight of 7.0 mg. The device provides a drain-source breakdown voltage (VDS) of 30 V and a continuous drain current (ID) of 0.5 A. Key electrical parameters include a maximum on-resistance (RDS(on)) of 145 mΩ at VGS = 4.5 V and 180 mΩ at VGS = 2.5 V. Gate threshold voltage (Vth) ranges from 0.5 V to 1.1 V. Switching characteristics include a turn-on time (ton) of 9 ns and a turn-off time (toff) of 15 ns under standard test conditions.
Feature Summary
- Dual N-channel configuration within a compact UF-6 package for high-density mounting
- Low on-resistance optimized for efficient switching performance
- Fast switching times suitable for high-speed applications
Applications
- High-speed switching circuits
- Battery protection systems
- Motor driver modules
Procurement Notes
Verify the component authenticity by checking the manufacturer marking against the official datasheet specifications. Confirm that the ordering suffix LF indicates lead-free compliance as per Toshiba standards. Ensure the supplier provides valid traceability documentation to guarantee the product meets original manufacturing quality requirements.
Selection Notes
Select this component when a dual N-channel MOSFET with low on-resistance is required in a small footprint. Consider the 30 V drain-source voltage rating and 0.5 A continuous current limit during circuit design. Evaluate the gate threshold voltage range to ensure compatibility with the intended logic drive levels for reliable switching operation.
Part Context
This part belongs to the SSM6N series of dual N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. The series utilizes U-MOSIII technology to achieve low on-resistance and fast switching speeds. These components are designed specifically for surface-mount applications requiring high-density board layouts.
Replacement Considerations
SSM6N25TU,LF serves as a direct alternative within the same series, offering identical pinout and package dimensions but with a reduced 20 V drain-source voltage rating compared to the 30 V rating of the SSM6N24TU,LF.
