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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.25A ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Rds On (Max) @ Id, Vgs：1.1Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：0.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：36pF @ 10V
- Power - Max：250mW
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
- Grade：-
- Qualification：-
Download product information
Overview
The SSM6N35AFE,LF is a dual N-channel silicon MOSFET in an ES6 (SOT-563) package. It supports 1.2 V drive with low on-resistance: max 9.0 Ω at VGS=1.2 V/ID=10 mA, and 1.1 Ω at VGS=4.5 V/ID=150 mA. Key ratings include VDSS of 20 V, continuous drain current ID of 250 mA, pulsed drain current IDP of 600 mA, and power dissipation PD of 150 mW. Gate-source voltage VGSS is ±10 V. Threshold voltage Vth ranges from 0.35 V to 1.0 V. Dynamic characteristics feature input capacitance Ciss of 18 pF typ., total gate charge Qg of 0.34 nC typ., turn-on delay td(on) of 2 ns typ., and fall time tf of 5.5 ns typ. Operating temperature spans -55 °C to +150 °C.
Feature Summary
- Supports low-voltage logic drive down to 1.2 V for efficient control in battery-powered systems.
- Provides low drain-source on-resistance across various gate voltages to minimize conduction losses.
- Integrates two independent N-channel MOSFETs in a compact surface-mount package.
Applications
- High-speed switching circuits
- Analog switches
Procurement Notes
Verify the component against the official Toshiba datasheet specifications before integration. Confirm that the ES6 package dimensions and pin assignments match the design requirements. Ensure electrostatic discharge precautions are followed during handling. Check RoHS compliance status with the supplier if required by local regulations. Validate thermal performance under actual operating conditions.
Selection Notes
Select this device for applications requiring dual N-channel MOSFETs with low-voltage drive capability. The 20 V breakdown voltage suits low-voltage signal paths. Consider the 150 mW power dissipation limit when designing heat dissipation strategies. The small ES6 package is suitable for space-constrained PCB layouts. Verify gate threshold voltage compatibility with the driving logic levels.
Part Context
The SSM6N35AFE belongs to Toshiba's silicon N-channel MOSFET series. It is part of the commercial production lineup started in October 2016. The device is designed for general-purpose switching and analog applications. It utilizes standard silicon technology within a compact surface-mount form factor.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult Toshiba representatives for potential alternatives.
FAQ
What is the maximum drain-source voltage rating?
The absolute maximum drain-source voltage (VDSS) is 20 V.
How many channels does the SSM6N35AFE contain?
It contains two independent N-channel MOSFETs.
What is the typical total gate charge?
The typical total gate charge (Qg) is 0.34 nC at VDD=10 V, ID=200 mA, and VGS=4.5 V.
