SSM6N37CTD(TPL3)

Overview

The Toshiba SSM6N37CTD(TPL3) is a dual N-channel small-signal MOSFET from the SSM series, housed in a CST6D package. It features a U-MOS structure with a drain-source breakdown voltage of 20 V and a continuous drain current of 5.6 A. The device has a maximum on-resistance of 5.6 Ω at VGS = 10 V and a gate-source voltage rating of ±10 V. It operates within a temperature range of -55°C to +150°C and dissipates up to 150 mW of power.

Feature Summary

• Dual N-channel configuration for compact circuit integration
• U-MOS trench technology for low on-resistance
• CST6D surface-mount package for space-saving design

Applications

• Cell phone power supply circuits
• Notebook PC power management
• Lithium-ion secondary battery protection circuits
• Motor driver power stages

Procurement Notes

Verify the specific ordering suffix (TPL3) against official Toshiba documentation to confirm tape-and-reel specifications and packaging details. Ensure the component meets RoHS compliance requirements for your target market before finalizing procurement orders.

Selection Notes

Select this component for applications requiring a dual N-channel switch with a 20 V rating and moderate current handling. The CST6D package is suitable for high-density PCB layouts. Confirm that the 5.6 A current rating and 150 mW power dissipation align with the thermal constraints of the end application.

Part Context

This part belongs to the Toshiba SSM series of small-signal MOSFETs, which are designed for low-voltage drive and high-speed switching. The SSM series utilizes U-MOS technology to achieve low on-resistance in compact packages, making it ideal for portable electronic devices and battery-powered systems.

Replacement Considerations

Check for direct substitutes within the SSM6N37 family or other dual N-channel MOSFETs with similar 20 V ratings and CST6D packaging. Verify pin compatibility and electrical parameters such as RDS(on) and ID before considering alternative components.