SSM6N58NU,LF

Overview

The Toshiba SSM6N58NU,LF is a dual N-channel MOSFET array housed in a compact 6-UDFN(2x2) surface-mount package. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 4A at 25°C. The device utilizes U-MOSVII-H technology to achieve a low on-resistance of 84mΩ at Vgs=4.5V and 112mΩ under other specified conditions. Key electrical parameters include a maximum gate charge of 1.8nC at 4.5V and an input capacitance of 129pF at 15V. Designed for logic-level operation, it offers a threshold voltage of 1V at 1mA, enabling direct drive from 1.8V logic sources. The component operates within a temperature range up to 150°C junction temperature and dissipates up to 1W of power.

Feature Summary

• Dual N-channel configuration integrated into a single compact surface-mount package for space-constrained designs.
• U-MOSVII-H technology enables low on-resistance and efficient switching performance.
• Logic-level gate drive capability allows direct interfacing with 1.8V control signals.
• High thermal tolerance supports reliable operation at elevated junction temperatures.

Applications

• DC-DC converter synchronous rectification stages
• Low-side switching in portable battery-powered devices
• Load switching applications requiring fast response times

Procurement Notes

Verify the complete part number including the LF suffix to ensure compliance with RoHS3 directives and REACH regulations. Confirm the specific tape-and-reel packaging quantity matches the production requirements. Check the moisture sensitivity level classification to determine proper storage and handling procedures before soldering. Ensure the supplier provides valid traceability documentation for quality assurance purposes.

Selection Notes

Select this component when a dual N-channel solution is required in a minimal footprint. The 30V rating suits low-voltage systems, while the 4A current capacity handles moderate loads. The low gate charge facilitates high-frequency switching operations. Verify that the 1.8V logic compatibility aligns with the system's microcontroller or driver output levels.

Part Context

This device belongs to the SSM6N58 series of dual MOSFET arrays manufactured by Toshiba Semiconductor and Storage. It is designed as a complementary solution for applications needing two independent N-channel switches in a single package. The U-MOSVII-H process technology distinguishes it from older generations by offering improved efficiency and lower conduction losses compared to standard planar structures.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult official Toshiba documentation or distributor cross-reference tools for compatible alternatives with matching pinouts and electrical specifications.