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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.3A US6
- Series：U-MOSVII-H
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：40pF @ 10V
- Power - Max：285mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SSM6N7002KFU,LXH is a single N-channel enhancement-mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes the U-MOSVII-H trench gate technology within a US6 (SOT-363) surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 60 V, a continuous drain current of 300 mA, and a maximum on-resistance of 1.5 Ohms at Vgs=10V. The device features a gate-source voltage range of ±20 V, a typical gate charge of 390 pC, and a power dissipation rating of 500 mW. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive reliability.
Feature Summary
- High ESD protection capabilities integrated into the compact package design
- AEC-Q101 qualified for automotive electronic applications
- Low on-resistance achieved through U-MOSVII-H trench gate technology
Applications
- Automotive circuit protection and switching
- General-purpose signal switching in consumer electronics
- Level shifting in low-voltage digital interfaces
Procurement Notes
Verify the specific suffix 'LXH' against official Toshiba documentation to confirm packaging details and RoHS compliance status. Ensure that the ordering information matches the exact component designation required for your bill of materials. Cross-reference with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a single N-channel switch with 60V capability and high ESD tolerance is required in a small footprint. Compare the 1.5 Ohm on-resistance and 300mA current limit against system requirements. Consider the US6 package dimensions for PCB layout constraints and verify thermal management needs given the 500mW power dissipation rating.
Part Context
This part belongs to the SSM6N7002 series of dual or single N-channel MOSFETs from Toshiba. It shares the core U-MOSVII-H technology with variants like the SSM6N7002KFU,LF, which offers a dual configuration. The LXH suffix typically denotes specific tape-and-reel packaging configurations for automated assembly.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with alternatives such as the SSM6N7002CFU,LF or other 60V N-channel MOSFETs in similar packages only after detailed parameter comparison.
