SSM6N813R,LXHF

Overview

The SSM6N813R,LXHF is a dual N-channel silicon MOSFET from Toshiba's U-MOSVIII-H series, housed in a TSOP6F surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current of 3.5 A. The device achieves low on-resistance values of 110 mΩ at VGS = 4.5 V and 88 mΩ at VGS = 10 V. It supports a maximum channel temperature of 175 °C and is qualified under the AEC-Q101 automotive standard.

Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• Supports 4.5 V gate drive operation
• Low drain-source on-resistance for efficient switching
• High channel temperature capability up to 175 °C

Applications

• Power management switches

Procurement Notes

Verify the specific ordering suffix (LF, LXGF, or LXHF) against project requirements. Confirm that the LXHF variant meets intended use classifications, as general-use parts may have restrictions for unintended applications. Ensure compliance with RoHS directives and verify environmental material declarations prior to final procurement decisions.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact footprint. Evaluate thermal dissipation capabilities based on the 1.5 W power rating and FR4 board mounting conditions. Consider the 175 °C junction temperature limit for high-temperature environments and ensure gate drive voltages align with the specified threshold characteristics.

Part Context

This part belongs to Toshiba's U-MOSVIII-H series, which utilizes advanced trench technology to minimize on-resistance while maintaining robust avalanche energy ratings. The TSOP6F package provides a small form factor suitable for space-constrained portable electronics and automotive modules where dual-channel integration is required.

Replacement Considerations

Direct substitutes include SSM6N813R,LF and SSM6N813R,LXGF. Verify pinout compatibility and electrical parameter alignment before substitution.