SSM6N951L,EFF

Overview

The SSM6N951L,EFF is a dual N-channel MOSFET from Toshiba, housed in a TCSP6A-172101 package. It features a common-drain configuration with a maximum drain-source voltage of 12 V and continuous drain current of 8 A. The device exhibits a low on-resistance of 5.1 mΩ at VGS = 4.5 V, with a gate charge of 26 nC. Operating within a temperature range of -55°C to +150°C, it dissipates up to 700 mW.

Feature Summary

• Dual N-channel architecture with shared common-drain connection for efficient power management
• Low on-resistance optimized for high-efficiency switching applications
• Enhanced thermal stability supporting operation up to 150°C junction temperature

Applications

• Power management circuits requiring compact dual-switch solutions
• DC-DC converter topologies utilizing common-drain configurations
• Load switching applications in portable electronic devices

Procurement Notes

Verify the specific ordering suffix EFF against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure compliance with RoHS directives and confirm the exact manufacturer part number matches procurement requirements before finalizing orders.

Selection Notes

Select this component for designs requiring a 12 V breakdown voltage and an 8 A current rating in a small footprint. The common-drain topology suits applications needing shared source connections. Verify that the 5.1 mΩ on-resistance meets the thermal dissipation limits for the intended operating environment.

Part Context

This component belongs to Toshiba's Small Signal MOSFETs category, specifically the Over 500mA Semi-Power Series. It utilizes the TCSP6A package, which provides a compact surface-mount solution suitable for space-constrained PCB layouts in modern consumer electronics.

Replacement Considerations

Consult Toshiba's official cross-reference guides for verified substitutes. No public substitute part numbers are confirmed in the provided documentation.