SSM6P40TU,LF

Overview

The SSM6P40TU,LF is a dual P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It features a UF-6 surface-mount package with a total power dissipation of 500 mW at 25 °C. The device supports a drain-source voltage (VDSS) of -30 V and a continuous DC drain current (ID) of -1.4 A. On-resistance is specified as 403 mΩ maximum at VGS = –4 V and 226 mΩ maximum at VGS = –10 V. Gate-source voltage limits are ±20 V, with a threshold voltage range of -0.8 V to -2.0 V. Operating temperature extends from -55 °C to +150 °C.

Feature Summary

• Dual P-channel configuration in a compact UF-6 package
• Low on-resistance optimized for 4.0 V drive applications
• High-speed switching capability with defined turn-on and turn-off times

Applications

• Power management switch circuits
• High-speed switching applications

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and compliance status. Confirm that the UF-6 package dimensions match the target PCB layout requirements. Ensure electrostatic discharge precautions are observed during handling prior to mounting.

Selection Notes

Select this component when a dual P-channel solution is required within a small footprint. Verify that the system logic levels support the specified gate threshold voltage range. Check thermal derating curves if operating above 25 °C ambient temperature to ensure power dissipation limits are not exceeded.

Part Context

This part belongs to the SSM6P series of silicon P-channel MOS type field-effect transistors. It utilizes Toshiba's standard manufacturing processes for low-voltage logic-level devices. The component is designed for integration into portable electronics and general-purpose switching circuits requiring efficient power control.

Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Ensure any replacement maintains the same UF-6 pinout and electrical ratings.