SSM6P41FE(TE85L,F)

Overview

The SSM6P41FE(TE85L,F) is a dual P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOS-V technology and is housed in an ES6-6 surface-mount package. The device features a drain-source voltage (VDSS) of -20 V and a continuous drain current (ID) of -720 mA. Key electrical parameters include a gate-source voltage (VGSS) rating of ±8 V, a maximum power dissipation (PD) of 150 mW, and a channel temperature limit of 150 °C. The on-resistance (RDS(ON)) varies from 0.30 Ω at -4.5 V to 1.04 Ω at -1.5 V gate drive. Total gate charge (Qg) is typically 1.76 nC.

Feature Summary

• Supports low-voltage logic-level driving with optimized on-resistance characteristics at -1.5 V and -1.8 V gate-source voltages.
• Integrates two independent P-channel MOSFETs within a compact six-pin surface-mount package for space-constrained designs.
• Engineered with U-MOS-V silicon technology to provide high forward transfer admittance and fast switching performance.

Applications

• Power management switches
• DC-DC converter circuits
• Battery protection modules

Procurement Notes

Verify the component authenticity by checking the manufacturer marking against the official datasheet specifications. Confirm that the ordering suffix matches the required tape-and-reel packaging format. Ensure compliance with RoHS directives and confirm the specific lot traceability requirements before finalizing procurement orders.

Selection Notes

Select this component when a dual P-channel configuration is required for low-voltage applications. Evaluate the thermal derating curves to ensure the 150 mW power dissipation limit is not exceeded under operating conditions. Verify that the system's gate drive voltage aligns with the specified threshold and on-resistance characteristics for optimal efficiency.

Part Context

This part belongs to the SSM6P41FE series of dual MOSFETs produced by Toshiba Semiconductor and Storage. It is designed as a complementary solution for N-channel counterparts, offering matched switching characteristics for bridge configurations. The ES6-6 package provides a standardized footprint for automated assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other dual P-channel MOSFETs only if pin compatibility and electrical ratings such as VDSS and RDS(ON) are strictly verified against the original specifications.