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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4A 6UDFN
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：45mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：480pF @ 10V
- Power - Max：1W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-UDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The SSM6P49NU,LF is a dual P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSVI technology in a UDFN-6 surface-mount package. The device features a drain-source breakdown voltage of 20 V and a continuous drain current of -4 A. Its typical on-resistance is 157 mOhms with a gate-source voltage range of ±12 V. The threshold voltage is specified at 1.2 V. Operating temperatures range from -55°C to +150°C, with a power dissipation rating of 1 W.
Feature Summary
- Dual configuration integrating two independent P-channel MOSFETs within a single compact package for space-efficient circuit design.
- U-MOSVI silicon technology provides enhanced switching performance and low on-resistance characteristics suitable for power management applications.
Applications
- Power management circuits requiring dual switch functionality
- Battery protection modules utilizing low-voltage P-channel control
- General-purpose signal switching in portable electronic devices
Procurement Notes
Verify the complete part number including the LF suffix to confirm lead-free compliance status. Confirm the specific manufacturing date code against project requirements. Ensure the UDFN-6 footprint matches the PCB layout specifications. Validate thermal resistance parameters for the intended enclosure environment. Cross-reference the datasheet revision to ensure compatibility with existing design documentation.
Selection Notes
Select this component when a dual P-channel configuration is required within a UDFN-6 footprint. The 20 V rating suits low-voltage systems. The 157 mOhm on-resistance balances conduction losses with switching speed. Consider the 1 W power dissipation limit for thermal management planning. Verify that the 12 V gate drive capability aligns with the system logic levels.
Part Context
This component belongs to the SSM6P49 series of dual MOSFETs from Toshiba. It shares the UDFN-6 package form factor with other small-signal devices in the lineup but differs in channel count and current ratings compared to single-channel variants like the SSM6J501NU. The U-MOSVI process node distinguishes it from older generations using different technology names.
Replacement Considerations
Direct substitutes must match the dual P-channel topology, 20 V rating, and UDFN-6 package. Verify pinout compatibility before substitution. Check if alternative manufacturers offer equivalent Rds(on) and current capabilities within the same thermal constraints.
